IndiumV3, Russie, Analysis, bibRecord, 000324

Deep muonium state in InSb : Recombination center vs. trapping center

Identifieur interne : 000324 ( Russie/Analysis ); précédent : 000323; suivant : 000325

Deep muonium state in InSb : Recombination center vs. trapping center

Auteurs : RBID : Pascal:06-0198337

Descripteurs français

Pascal (Inist)
- Niveau profond, Muonium, Piégeage, Etat lié, Champ intense, Relaxation spin muonique, Interaction hyperfine, Site cristallographique, Interstitiel, Ionisation impureté, Niveau peu profond, Valence, Niveau énergie, Indium antimoniure, Semiconducteur, InSb, 7675.
Wicri :
- geographic : Valence (Drôme).

English descriptors

KwdEn :
- Bound state, Crystallographic site, Deep level, Energy levels, High field, Hyperfine interactions, Impurity ionization, Indium antimonides, Interstitials, Muon spin relaxation, Muonium, Semiconductor materials, Shallow level, Trapping, Valence.

Abstract

The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A = 2464 ± 1 MHz) is characteristic of deep-level Mu° centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300 K. In contrast, the Mu° center in InSb disappears above about 30 K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 009202
to stream Main, to step Repository: 008E97
to stream Russie, to step Extraction: 000324

Links to Exploration step

Pascal:06-0198337

Le document en format XML

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<author><name sortKey="Storchak, V G" uniqKey="Storchak V">V. G. Storchak</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center "Kurchatov Institute", Kurchatov Sq.1</s1>
<s2>Moscow 123182</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Eshchenko, D G" uniqKey="Eshchenko D">D. G. Eshchenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physik-Institut der Universität Zürich</s1>
<s2>8057 Zürich</s2>
<s3>CHE</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Suisse</country>
<wicri:noRegion>Physik-Institut der Universität Zürich</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Brewer, J H" uniqKey="Brewer J">J. H. Brewer</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Astronomy, Canadian Institute for Advanced Research, University of British Columbia</s1>
<s2>Vancouver, B.C., V6T 1Z1</s2>
<s3>CAN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Canada</country>
<wicri:noRegion>Vancouver, B.C., V6T 1Z1</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Aronzon, B A" uniqKey="Aronzon B">B. A. Aronzon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center "Kurchatov Institute", Kurchatov Sq.1</s1>
<s2>Moscow 123182</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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<author><name sortKey="Cottrell, S P" uniqKey="Cottrell S">S. P. Cottrell</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>ISIS Facility, Rutherford Appleton Laboratory, Chilton</s1>
<s2>Oxfordshire OX11 0QX</s2>
<s3>GBR</s3>
<sZ>5 aut.</sZ>
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<country>Royaume-Uni</country>
<wicri:noRegion>Oxfordshire OX11 0QX</wicri:noRegion>
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<author><name sortKey="Lichti, R L" uniqKey="Lichti R">R. L. Lichti</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Physics Department, Texas Tech University</s1>
<s2>Lubbock, TX 79409-1051</s2>
<s3>USA</s3>
<sZ>6 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Lubbock, TX 79409-1051</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Savici, A T" uniqKey="Savici A">A. T. Savici</name>
<affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Physics, Columbia University</s1>
<s2>New York, NY 10027</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>New York, NY 10027</wicri:noRegion>
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</author>
<author><name sortKey="Uemura, Y J" uniqKey="Uemura Y">Y. J. Uemura</name>
<affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Physics, Columbia University</s1>
<s2>New York, NY 10027</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>New York, NY 10027</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0198337</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0198337 INIST</idno>
<idno type="RBID">Pascal:06-0198337</idno>
<idno type="wicri:Area/Main/Corpus">009202</idno>
<idno type="wicri:Area/Main/Repository">008E97</idno>
<idno type="wicri:Area/Russie/Extraction">000324</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0921-4526</idno>
<title level="j" type="abbreviated">Physica, B Condens. matter</title>
<title level="j" type="main">Physica. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bound state</term>
<term>Crystallographic site</term>
<term>Deep level</term>
<term>Energy levels</term>
<term>High field</term>
<term>Hyperfine interactions</term>
<term>Impurity ionization</term>
<term>Indium antimonides</term>
<term>Interstitials</term>
<term>Muon spin relaxation</term>
<term>Muonium</term>
<term>Semiconductor materials</term>
<term>Shallow level</term>
<term>Trapping</term>
<term>Valence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Niveau profond</term>
<term>Muonium</term>
<term>Piégeage</term>
<term>Etat lié</term>
<term>Champ intense</term>
<term>Relaxation spin muonique</term>
<term>Interaction hyperfine</term>
<term>Site cristallographique</term>
<term>Interstitiel</term>
<term>Ionisation impureté</term>
<term>Niveau peu profond</term>
<term>Valence</term>
<term>Niveau énergie</term>
<term>Indium antimoniure</term>
<term>Semiconducteur</term>
<term>InSb</term>
<term>7675</term>
</keywords>
<keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Valence (Drôme)</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A = 2464 ± 1 MHz) is characteristic of deep-level Mu° centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300 K. In contrast, the Mu° center in InSb disappears above about 30 K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>Deep muonium state in InSb : Recombination center vs. trapping center</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance, μSR 2005, Oxford, UK, 8-12 August 2005</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>STORCHAK (V. G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ESHCHENKO (D. G.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BREWER (J. H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ARONZON (B. A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>COTTRELL (S. P.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LICHTI (R. L.)</s1>
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<fA11 i1="07" i2="1"><s1>SAVICI (A. T.)</s1>
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<fA11 i1="08" i2="1"><s1>UEMURA (Y. J.)</s1>
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<fA12 i1="01" i2="1"><s1>BLUNDELL (Stephen J.)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>KING (Philip J. C.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>PRATT (Francis L.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Russian Research Center "Kurchatov Institute", Kurchatov Sq.1</s1>
<s2>Moscow 123182</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Physik-Institut der Universität Zürich</s1>
<s2>8057 Zürich</s2>
<s3>CHE</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics and Astronomy, Canadian Institute for Advanced Research, University of British Columbia</s1>
<s2>Vancouver, B.C., V6T 1Z1</s2>
<s3>CAN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>ISIS Facility, Rutherford Appleton Laboratory, Chilton</s1>
<s2>Oxfordshire OX11 0QX</s2>
<s3>GBR</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Physics Department, Texas Tech University</s1>
<s2>Lubbock, TX 79409-1051</s2>
<s3>USA</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="06"><s1>Department of Physics, Columbia University</s1>
<s2>New York, NY 10027</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Department of Physics, Oxford University, Clarendon Laboratory</s1>
<s2>Oxford OX1 3PU</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>ISIS Pulsed Muon Facility, ISIS, Rutherford Appleton Laboratory</s1>
<s2>Chilton, OX11 0QX</s2>
<s3>GBR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA20><s1>387-389</s1>
</fA20>
<fA21><s1>2006</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>145B</s2>
<s5>354000133076250980</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0198337</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A = 2464 ± 1 MHz) is characteristic of deep-level Mu° centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300 K. In contrast, the Mu° center in InSb disappears above about 30 K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70F75</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Niveau profond</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Deep level</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Nivel profundo</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Muonium</s0>
<s5>03</s5>
</fC03>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Piégeage</s0>
<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Etat lié</s0>
<s5>05</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Bound state</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Champ intense</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Interaction hyperfine</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Hyperfine interactions</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Site cristallographique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Crystallographic site</s0>
<s5>09</s5>
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<s5>09</s5>
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<s5>11</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Impurity ionization</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Ionización impureza</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Niveau peu profond</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Shallow level</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Nivel poco profundo</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Valence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Valence</s0>
<s5>13</s5>
</fC03>
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<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium antimoniure</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>7675</s0>
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<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Muon Spin ROtation, Relaxation and Resonance</s1>
<s2>10</s2>
<s3>Oxford GBR</s3>
<s4>2005-08-08</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |clé=     Pascal:06-0198337
   |texte=   Deep muonium state in InSb : Recombination center vs. trapping center
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Deep muonium state in InSb : Recombination center vs. trapping center

Deep muonium state in InSb : Recombination center vs. trapping center

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri